VBsemi Electronics 2SJ213
100V P-Channel MOSFET
| Part No. | 2SJ213 |
|---|---|
| Datasheet | 2SJ213 Download |
| Manufacturer | VBsemi Electronics |
| Description | 100V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100% Rg and UIS Tested
APPLICATIONS
● Active Clamp in Intermediate DC/ DC Power Supplies● H-Bridge High Side Switch for Lighting Application Available GD S D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. Limit - 100 ± 20 - 3.0 -2.1 - 2a, b - 1.6a, b - 12 - 4.9 - 2.5a, b - 15 11.25 6.5 4.8 3.1a, b 2a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, b Maximum Junction-to-Foot (Drain) Notes: a. Surface mounted on 1" x 1" FR4 board. b.
