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2SJ327-Z-E1-AZ
P-Channel 60-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 60
0.061 at V GS = - 10 V
0.072 at VGS = - 4.5 V
ID (A) - 30 - 25
Qg (Typ) 10
FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested
APPLICATIONS • Load Switch
TO-252
S G
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
± 20
V
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 100 °C
ID
- 30 - 25
Pulsed Drain Current
IDM
- 30
A
Continuing Source Current (Diode Conduction)
IS
- 20
Avalanche Current
IAS
- 20
Single Pulse Avalanche Energy Maximum Power Dissipation
L = 0.1 mH
EAS
7.
2SJ327-Z-E1 Datasheet
