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2SJ333-VB
2SJ333-VB Datasheet
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30
0.033 at VGS = - 10 V
0.046 at VGS = - 4.5 V
ID (A)d - 38 - 25
Qg (Typ.) 19 nC
TO-252
S
FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
APPLICATIONS • Load Switch • Notebook Adaptor Switch
G
www.VBsemi.com
RoHS
COMPLIANT
GDS Top View
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
IS
L = 0.
2SJ333 Datasheet
