VBsemi Electronics 2SJ412
P-Channel 100-V (D-S) MOSFET
| Part No. | 2SJ412 |
|---|---|
| Datasheet | 2SJ412 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 100-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● TrenchFET® Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Power Switch● DC/DC Converters S G GDS Top View D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit - 100 ± 20 - 12 - 8.6 - 36 - 18 16.2 38.1b 2.5 - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Mount)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 50 3.9 Unit V A mJ W °C Unit °C/W 1 2SJ412-VB SPECIFICATIONS TJ = 25 °C...
