VBsemi Electronics 2SJ419
P-Channel 12-V (D-S) MOSFET
| Part No. | 2SJ419 |
|---|---|
| Datasheet | 2SJ419 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 12-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Load Switch● Battery Switch S SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 12 V VGS ±8 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID - 16 - 10 - 11.5 -8 A IDM - 50 Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 3.0 1.5 1.9 0.95 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 33 70 16 Maximum 42 84 21 Unit °C/W 1 2SJ419-VB SPECIFICATIONS TJ = 25 °C, unl...
