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2SJ439 Datasheet PDF

VBsemi Electronics 2SJ439

P-Channel 30-V (D-S) MOSFET

Part No. 2SJ439
Datasheet 2SJ439 Download
Manufacturer VBsemi Electronics
Description P-Channel 30-V (D-S) MOSFET
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2SJ439 datasheet page 1 preview

FEATURES

● Halogen-free
● Trench Power MOSFET
● 100 % Rg Tested
● 100 % UIS Tested

APPLICATIONS

● Load Switch
● Notebook Adaptor Switch G RoHS COMPLIANT GDS Top View D P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID Pulsed Drain Current TA = 70 °C IDM Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C IS L = 0.1 mH IAS EAS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TA = 70 °C TJ, Tstg Limit - 30 ± 20 - 38 - 25 - 14.9a, b - 13.6a, b - 112 - 4.1 - 2.2a, b - 20 20 25 20 2.7a, b 1.7a, b - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta, c Maximum Junction-to-Foot Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Maximum under Steady State conditions is 85 °C/W. d.
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