Datasheet Summary
2SJ461-VB
2SJ461-VB Datasheet
P-Channel 60 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
- 60
3 at VGS =
- 10 V
VGS(th) (V)
- 1 to
- 3
ID (mA) -500
Features
- Halogen-free According to IEC 61249-2-21 Definition
- Trench Power MOSFET
- High-Side Switching
- Low On-Resistance: 3
- Low Threshold:
- 2 V (typ.)
- Fast Swtiching Speed: 20 ns (typ.)
- Low Input Capacitance: 20 pF (typ.)
- pliant to RoHS Directive 2002/95/EC
TO-236 (SOT-23)
G1 S2
3D
D P-Channel...
