VBsemi Electronics 2SJ464
P-Channel 100-V (D-S) MOSFET
| Part No. | 2SJ464 |
|---|---|
| Datasheet | 2SJ464 Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel 100-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● Package with Low Thermal Resistance
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC TO-220 FULLPAK S G GDS Top View D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction)a IS Pulsed Drain Currentb IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD Operating Junction and Storage Temperature Range TJ, Tstg LIMIT - 100 ± 20 - 50 - 30 - 50 - 180 - 44 96 68 35 - 55 to + 175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 material). d. Parametric verification ongoing.
