VBsemi Electronics 2SJ606-Z
60V P-Channel MOSFET
| Part No. | 2SJ606-Z |
|---|---|
| Datasheet | 2SJ606-Z Download |
| Manufacturer | VBsemi Electronics |
| Description | 60V P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● DC/DC Primary Switch RoHS COMPLIANT TO-220AB S G Drain connected to Tab GD S Top View D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C)c TC = 25 °C TC = 125 °C ID Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energya IDM IAS L = 0.1 mH EAS Power Dissipation TC = 25 °C TA = 25 °C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Free Air Junction-to-Case Notes: a. Duty cycle 1 %. b. See SOA curve for voltage derating. c. Limited by package. Symbol RthJA RthJC Limit - 60 ± 20 - 90 - 67 - 200 - 65 211 250b 2.4 - 55 to 175 Limit 62 0.6 Unit V A mJ W °C Unit °C/W 1 2SJ606-Z-VB SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Static Drain-Source Breakdo...
