2SJ607-Z - 60V P-Channel MOSFET

VBsemi

Key Features

Trench Power MOSFET.
Package with Low Thermal Resistance.
100 % Rg Tested Available RoHS.

2SJ607-Z 60v p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SJ607-Z
Manufacturer	VBsemi
File Size	251.12 KB
Description	60V P-Channel MOSFET
Datasheet	2SJ607-Z Datasheet

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Full PDF Text Transcription (Reference)

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2SJ607-Z-VB 2SJ607-Z-VB Datasheet P-Channel 60-V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.0065 at VGS = - 10 V 0.0085 at VGS = - 4.5 V ID (A)d - 110 FEATURES • Trench Power MOSFET • Package with Low Thermal Resistance • 100 % Rg Tested Available RoHS* COMPLIANT TO-263 S G G DS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currentd (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyd IAS L = 0.