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2SJ607-Z Datasheet PDF

VBsemi Electronics 2SJ607-Z

60V P-Channel MOSFET

Part No. 2SJ607-Z
Datasheet 2SJ607-Z Download
Manufacturer VBsemi Electronics
Description 60V P-Channel MOSFET
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2SJ607-Z datasheet page 1 preview

FEATURES

● Trench Power MOSFET
● Package with Low Thermal Resistance
● 100 % Rg Tested Available RoHS* COMPLIANT TO-263 S G G DS Top View D P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Currentd (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current Single Pulse Avalanche Energyd IAS L = 0.1 mH EAS Maximum Power Dissipation TC = 25 °C TA = 25 °Cb PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case Notes: a. Duty cycle ≤ 1 %. b. When Mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Limited by Package. PCB Mountd Symbol RthJA RthJC * Pb containing terminations are not RoHS compliant, exemptions may apply. Limit - 60 ± 20 - 110 - 75 - 200 - 85 211 272c 3.75b - 55 to 175 Limit 40 0.55 Unit V A mJ W °C Unit °C/W 1 2SJ607-Z-VB SPECIFICA...
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