2SJ649 - P-Channel MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
100 % Rg and UIS Tested.
Compliant to RoHS Directive 2002/95/EC S G GDS Top View D P-Channel MOSFET.

2SJ649 p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SJ649
Manufacturer	VBsemi
File Size	172.52 KB
Description	P-Channel MOSFET
Datasheet	2SJ649 Datasheet

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2SJ649-VB 2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.050 at VGS = - 10 V - 60 0.060 at VGS = - 4.5 V ID (A) - 30 - 24 Qg (Typ.) 67 TO-220 FULLPAK FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current (t = 300 µs) IDM Avalanche Current IAS Single Avalanche Energya L = 0.