2SJ649 Description
2SJ649-VB 2SJ649-VB Datasheet P-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.050 at VGS = - 10 V - 60 0.060 at VGS = - 4.5 V ID (A) - 30 - 24 Qg (Typ.) 67 TO-220 FULLPAK.
2SJ649 Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFET
- 100 % Rg and UIS Tested
- pliant to RoHS Directive 2002/95/EC