2SK1259 - N-Channel MOSFET

VBsemi

Key Features

TrenchFET® power MOSFET.
Package with low thermal resistance.
100 % Rg and UIS tested TO-3P D G D S D (TAB) G N-Channel MOSFET S.

2SK1259 n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	2SK1259
Manufacturer	VBsemi
File Size	252.50 KB
Description	N-Channel MOSFET
Datasheet	2SK1259 Datasheet

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2SK1259-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package 2SK1259-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com 60 0.005 150 Single TO-247 FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • 100 % Rg and UIS tested TO-3P D G D S D (TAB) G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Source Current (Diode Conduction) a TC = 25 °C TC = 125 °C Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.