VBsemi Electronics 2SK215
N-Channel 150-V (D-S) MOSFET
FEATURES
● Trench Power MOSFETs● 175 °C Junction Temperature
● New Low Thermal Resistance Package
● PWM Optimized
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Primary Side Switch D GD S Top View G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 150 ± 20 50 35 150 50 80 166b 3.75 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When Mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 0.9 Unit V A mJ W °C Unit °C/W 1 2SK215-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Para...