VBsemi Electronics 2SK2507
N-Channel 60V (D-S) MOSFET
| Part No. | 2SK2507 |
|---|---|
| Datasheet | 2SK2507 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 60V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Isolated Package● High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
● Sink to Lead Creepage Distance = 4.8 mm
● 175 °C Operating Temperature
● Dynamic dV/dt Rating
● Low Thermal Resistance
● Lead (Pb)-free Available RoHS COMPLIANT D GDS G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A (see fig. 12). c. ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d.
