VBsemi Electronics 2SK2836
Power MOSFET
| Part No. | 2SK2836 |
|---|---|
| Datasheet | 2SK2836 Download |
| Manufacturer | VBsemi Electronics |
| Description | Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Low Gate Charge Qg Results in Simple Drive Requirement● Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT
● Fully Characterized Capacitance and Avalanche Voltage and Current
● Compliant to RoHS directive 2002/95/EC D GD S D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currente Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 3.2 A (see fig.
