VBsemi Electronics 2SK2952
N-Channel 550V (D-S) Power MOSFE
| Part No. | 2SK2952 |
|---|---|
| Datasheet | 2SK2952 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 550V (D-S) Power MOSFE |
| Buy | Stock & Price |
FEATURES
● Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness - Avalanche Energy Rated (UIS)● Optimal Efficiency and Operation - Low Cost - Simple Gate Drive Circuitry - Low Figure-of-Merit (FOM): Ron x Qg - Fast Switching D TO-220 FULLPAK G GDS Top View S N-Channel MOSFET
APPLICATIONS
● Consumer Electronics - Displays (LCD or Plasma TV)● Server and Telecom Power Supplies - SMPS
● Industrial - Welding - Induction Heating - Motor Drives
● Battery Chargers
● SMPS - Power Factor Correction (PFC)
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage Gate-Source Voltage AC (f > 1 Hz) VGS Continuous Drain Current (TJ = 150 °C) Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Maximum Power Dissipation Operating Junction and Storage Temperature Range Drain-Source Voltage Slope Reverse Diode dV/dtd TJ = 125 °C EAS PD TJ, Tstg dV/dt Soldering Recommendations (Peak Temperature) for 10 s Notes a.
