VBsemi Electronics 2SK2965
N-Channel 200V (D-S) MOSFET
| Part No. | 2SK2965 |
|---|---|
| Datasheet | 2SK2965 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 200V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Isolated Package● High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
● Sink to Lead Creepage Distance = 4.8 mm
● 175 °C Operating Temperature
● Dynamic dV/dt Rating
● Low Thermal Resistance
● Lead (Pb)-free Available Available RoHS TO-220 FULLPAK GDS D G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb EAS Repetitive Avalanche Currenta IAR Repetitive Avalanche Energya EAR Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 1.0 mH, RG = 25 Ω, IAS = 7.2 A (see fig.
