Datasheet4U Logo Datasheet4U.com

2SK2972 - N-Channel MOSFET

Features

  • Low figure-of-merit (FOM) Ron x Qg.
  • Low input capacitance (Ciss).
  • Reduced switching and conduction losses.
  • Ultra low gate charge (Qg).
  • Avalanche energy rated (UIS).

📥 Download Datasheet

Datasheet preview – 2SK2972

Datasheet Details

Part number 2SK2972
Manufacturer VBsemi
File Size 329.52 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2972 Datasheet
Additional preview pages of the 2SK2972 datasheet.

📁 Similar Datasheet

  • 2SK2972 - N-Channel MOSFET (Toshiba)
  • 2SK2973 - RF POWER MOS FET (Mitsubishi Electric Semiconductor)
  • 2SK2974 - RF POWER MOS FET (Mitsubishi Electric Semiconductor)
  • 2SK2975 - RF POWER MOS FET (Mitsubishi Electric Semiconductor)
  • 2SK2976 - N-Channel MOSFET (Sanyo Semicon Device)
  • 2SK2977LS - N-Channel Silicon MOSFET (Sanyo Semicon Device)
  • 2SK2978 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
  • 2SK2978 - Silicon N-Channel MOSFET (Renesas)
  • 2SK2900-01 - N-channel MOS-FET (Fuji Electric)
  • 2SK2901-01L - N-CHANNEL SILICON POWER MOS-FET (Fuji Electric)
Other Datasheets by VBsemi

Full PDF Text Transcription

Click to expand full text
2SK2972-VB 2SK2972-VB Datasheet /$IBOOFM7 %4 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 25 °C (Ω) Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 0 VGS = 10 V 57 4.0 5.4 Single 0.
Published: |