VBsemi Electronics 2SK3090
N-Channel 30-V (D-S) MOSFET
| Part No. | 2SK3090 |
|---|---|
| Datasheet | 2SK3090 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 30-V (D-S) MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
● OR-ing● Server
● DC/DC G D S Top View G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 68a, e 62e 68.8b, c 57b, c 90 36 64.8 90a, e 3.13b, c 250a 175 3.75b, c 2.63b, c - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol Maximum Junction-to-Ambientb, d t 10 sec RthJA Maximum Junction-to-Case Steady State RthJC Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d.
