Datasheet4U Logo Datasheet4U.com

2SK3363-01 - N-Channel 30V MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • 100 % Rg and UIS Tested.
  • Compliant to RoHS Directive 2011/65/EU.

📥 Download Datasheet

Datasheet Details

Part number 2SK3363-01
Manufacturer VBsemi
File Size 242.59 KB
Description N-Channel 30V MOSFET
Datasheet download datasheet 2SK3363-01 Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3363-01 N-Channel MOSFET Fuji Electric
2SK3360 N-Channel MOSFET NEC
2SK3361 N-Channel MOSFET NEC
2SK3362 N-Channel MOSFET Fuji Electric
2SK3362-01 N-CHANNEL SILICON POWER MOSFET Fuji Electric

Other Datasheets by VBsemi

Part Number Description
2SK3353-Z N-Channel 60V MOSFET
2SK3074 N-Channel 30V MOSFET
2SK3101 N-Channel 550V Power MOSFET
2SK3424 N-Channel 30V MOSFET
2SK3430 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK3363-01-VB 2SK3363-01-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at VGS = 4.5 V ID (A) Configuration TO-220AB 30 0.003 0.004 120 Single D FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2011/65/EU APPLICATIONS • OR-ing • Server • DC/DC G GDS Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.