2SK3530-01MR Key Features
- Dynamic dV/dt Rating
- Repetitive Avalanche Rated
- Isolated Central Mounting Hole
- Fast Switching
- Ease of Paralleling
- Simple Drive Requirements
- pliant to RoHS Directive 2002/95/EC
- Part: 2SK3530-01MR
- Manufacturer: VBsemi
- Size: 442.57 KB
Other 2SK3530-01MR Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Fuji Electric |
2SK3530-01MR | N-Channel MOSFET |
2SK3530-01MR Description
2SK3530-01MR-VB Datasheet N-Channel 800V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 800 VGS = 10 V 1.2 200 24 110 Single.