2SK811 Description
2SK811-VB 2SK811-VB Datasheet N-Channel 100-V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 100 VGS = 10 V Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single 0.086.
2SK811 Key Features
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s
- Sink to Lead Creepage Distance = 4.8 mm
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available