VBsemi Electronics 30N20G
N-Channel 200V MOSFET
| Part No. | 30N20G |
|---|---|
| Datasheet | 30N20G Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 200V MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 175 °C Junction Temperature
● Low Thermal Resistance Package
● PWM Optimized for Fast Switching
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Isolated DC/DC Converters - Primary-Side Switch D GD S Top View G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.1 mH EAR Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junction and Storage Temperature Range TJ, Tstg Limit 200 ± 20 40 25 80 20 16.2 200b 4.5 - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)c Junction-to-Case (Drain) Notes: a. Duty cycle ≤ 1 %. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Symbol RthJA RthJC Limit 40 1 Unit V A mJ W °C Unit °C/W 1 30N20G-VB TO263 SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min .
