30N20G - N-Channel 200V MOSFET

Datasheet Summary

Features

TrenchFET® Power MOSFET.
175 °C Junction Temperature.
Low Thermal Resistance Package.
PWM Optimized for Fast Switching.
Compliant to RoHS Directive 2002/95/EC.

VBsemi

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Datasheet Details

Part number	30N20G
Manufacturer	VBsemi
File Size	190.88 KB
Description	N-Channel 200V MOSFET
Datasheet	30N20G Datasheet
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30N20G-VB TO263 30N20G-VB TO263 Datasheet N-Channel 200 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.048 at VGS = 10 V 0.060 at VGS = 6.5 V TO-263 ID (A) 40 35 FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • PWM Optimized for Fast Switching • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Isolated DC/DC Converters - Primary-Side Switch D GD S Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain Current IDM Avalanche Current IAR Repetitive Avalanche Energya L = 0.

Published: Apr 7, 2025 |