VBsemi Electronics 30P10GS
P-Channel MOSFET
| Part No. | 30P10GS |
|---|---|
| Datasheet | 30P10GS Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET S G D P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS - 100 V VGS ± 20 TC = 25 °C - 37 Continuous Drain Current (TJ = 150 °C)b TC = 70 °C TA = 25 °C ID - 29.5 - 10b, c Pulsed Drain Current TA = 70 °C - 8.2b, c A IDM - 150 Continuous Source Current (Diode Conduction) TC = 25 °C TA = 25 °C IS - 50a - 6.75b, c Avalanche Current Single Pulse Avalanche Energy IAS - 35 L = 0.1 mH EAS 61 mJ TC = 25 °C 113.6 Maximum Power Dissipation TC = 70 °C 72.7 TA = 25 °C PD 6.9b, c W TA = 70 °C 4.4b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient PCB Mount (TO-263)c Junction-to-Case (Drain) Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. Symbol RthJA RthJC Limit 40 2.1 Unit °C/W 1 30P10GS-VB SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter...
