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40N10-VB TO252
40N10-VB TO252 Datasheet
N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.030 at VGS = 10 V
0.035 at VGS = 4.5 V
ID (A) 40 37
FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package
Available
RoHS*
COMPLIANT
D TO-252
GDS Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.
40N10 Datasheet
