VBsemi Electronics 45N10
N-Channel MOSFET
| Part No. | 45N10 |
|---|---|
| Datasheet | 45N10 Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 175 °C Junction Temperature
● Low Thermal Resistance Package
● 100 % Rg Tested
APPLICATIONS
● Isolated DC/DC Converters RoHS COMPLIANT Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage TC = 25 °C Continuous drain current (TJ = 150 °C) TC = 70 °C TA = 25 °C Pulsed drain current (t = 100 μs) TA = 70 °C Continuous source-drain diode current Single pulse avalanche current Single pulse avalanche energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum power dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating junction and storage temperature range Soldering recommendations (peak temperature) c VDS VGS ID IDM IS IAS EAS PD TJ, Tstg LIMIT 100 ± 20 30 19 10 b, c 8.5b, c 75 56 4.5 b, c 20 20 60 40 5 b, c 3.2 b, c -55 to +150 260 THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Maximum junction-to-case (drain) Notes a.
