Datasheet Summary
4800AGM-VB
4800AGM-VB Datasheet
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.008 at VGS= 10 V
0.011 at VGS = 4.5 V
ID (A)a 13 11
Qg (Typ.) 6.1 nC
Features
- Halogen-free
- TrenchFET® Power MOSFET
- Optimized for High-Side Synchronous
Rectifier Operation
- 100 % Rg Tested
- 100 % UIS Tested
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
APPLICATIONS
- Notebook CPU Core
- High-Side Switch
Top View
S N-Channel...
