VBsemi Electronics 4816SM
Dual N-Channel 30-V MOSFET
| Part No. | 4816SM |
|---|---|
| Datasheet | 4816SM Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel 30-V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Notebook Logic dc-to-dc● Low Current dc-to-dc D1 G1 1 S2 2 S2 3 G2 4 SO-8 Top View 8 D1 7 S1/D2 6 S1/D2 5 S1/D2 G1 N-Channel 1 MOSFET G2 N-Channel 2 MOSFET S2 S1/D2 Schottky Diode
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol Channel-1 Channel-2 Unit Drain-Source Voltage Gate-Source Voltage VDS 30 30 V VGS ± 16 ± 16 TC = 25 °C 8.0 15.0 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 6.4 6.7b, c 12.0 11.4b, c TA = 70 °C 5.4b, c 9.1b, c Pulsed Drain Current (10 µs Pulse Width) IDM 35 60 A Source-Drain Current Diode Current TC = 25 °C TA = 25 °C IS 1.8 1.25b, c 3.8 2.4b, c Pulsed Source-Drain Current ISM 35 35 Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS EAS 15 11.2 15 11.2 mJ TC = 25 °C 1.98 4.16 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD...
