VBsemi Electronics 4961M
Dual P-Channel 20V MOSFET
| Part No. | 4961M |
|---|---|
| Datasheet | 4961M Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual P-Channel 20V MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Trench Power MOSFET
● Advanced High Cell Density Process
● Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
● Load Switching S1 S2 G1 G2 D1 P-Channel MOSFET D2 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS - 20 V VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID - 8.9 - 7.1 - 6.7 - 5.4 A IDM - 30 Continuous Source Current (Diode Conduction)a IS - 1.7 - 0.9 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.0 1.3 1.1 0.7 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 46 80 24 Maximum 62.5 110 32 Unit °C/W 1 4961M-VB SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min.
