5521GM
FEATURES
- Trench power MOSFET
- 100 % Rg and UIS tested
APPLICATIONS
- Active clamp in intermediate DC/DC power supplies
- LED Lighting
- Load switch
S1
S2
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
G1
G2
Top View
D1 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage
Gate-source voltage
Continuous drain current (TJ = 150 °C) Pulsed drain current (t = 100 μs)
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continuous source-drain diode current
Single pulse avalanche current Single pulse avalanche energy
TC = 25 °C TA = 25 °C
L = 0.1 m H
TC = 25 °C
Maximum power dissipation
TC = 70 °C TA = 25 °C
TA = 70 °C
Operating junction and storage temperature range
Soldering remendations (peak temperature) d, e
VDS VGS
IDM IS IAS EAS
TJ, Tstg
LIMIT
-100 ± 20 -4.5 -3.6 -2.8 b, c -2.1 b, c -20 -4.5a -2.8b, c -15 11.25 27.8 17.8 3.5 b, c 2.2 b, c -55 to +150 260
D2 P-Channel...
