VBsemi Electronics 80N03P
N-Channel 30V MOSFET
| Part No. | 80N03P |
|---|---|
| Datasheet | 80N03P Download |
| Manufacturer | VBsemi Electronics |
| Description | N-Channel 30V MOSFET |
| Buy | Stock & Price |
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
● Compliant to RoHS Directive 2011/65/EU
APPLICATIONS
● OR-ing● Server
● DC/DC G GDS Top View S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Pulse Single Pulse Avalanche Energy L = 0.1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 30 ± 20 120 60e 28.8b, c 19b, c 380 36 64.8 90a, e 3.13b, c 250a 175 3.75b, c 2.63b, c - 55 to 175 THERMAL RESISTANCE RATINGS Parameter Symbol Typ. Maximum Junction-to-Ambientb, d Maximum Junction-to-Case t 10 sec RthJA 32 Steady State RthJC 0.5 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d.
