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82N06 - TO262 N-Channel 60V MOSFET

Key Features

  • Trench power MOSFET.
  • Package with low thermal resistance.
  • AEC-Q101 qualified d.
  • 100 % Rg and UIS tested D SS D G Top View G N-Channel MOSFET S.

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Datasheet Details

Part number 82N06
Manufacturer VBsemi
File Size 219.18 KB
Description TO262 N-Channel 60V MOSFET
Datasheet download datasheet 82N06 Datasheet

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82N06-VB TO262 82N06-VB TO262 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package TO-262 60 0.006 120 Single TO-262 FEATURES • Trench power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested D SS D G Top View G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C a TC = 125 °C ID Continuous Source Current (Diode Conduction) a IS Pulsed Drain Current b IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.