VBsemi Electronics 880AE
Dual N-Channel MOSFET
| Part No. | 880AE |
|---|---|
| Datasheet | 880AE Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Halogen-free Option Available● TrenchFET® Power MOSFETs Pb-free Available RoHS* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2
ABSOLUTE MAXIMUM RATINGS
TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 7.6 6.2 6.5 4.5 A IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.0 0.96 0.64 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on FR4 board, t ≤ 10 s. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF * Pb containing terminations are not RoHS compliant, exemptions may apply. Typ. 72 100 55 Max. 83 120 70 Unit °C/W 1 880AE-VB SPECIFICATIONS TJ = 25 °C, u...
