The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AO5600E-VB
AO5600E-VB Datasheet N-and P-Channel 20V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
N-Channel
VDS (V) 20
RDS(on) (Ω) 0.270 at VGS = 4.5 V 0.410 at VGS = 2.5 V
P-Channel
- 20
0.660 at VGS = - 4.5 V
0.840 at VGS = - 2.5 V
ID (A) 0.60 0.55 - 0.30 - 0.25
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• Trench Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
SC-75-6
D1
S2
G2 G1
Top View
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS
20
- 20
Gate-Source Voltage
VGS
± 20
± 20
Continuous Drain Current (TJ = 150 °C)a, b
TA = 25 °C TA = 70 °C
ID
0.6
- 0.3
0.55
- 0.
AO5600E Datasheet
