AO6800 Description
AO6800 Dual N-Channel 20 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.022 at VGS = 4.5 V 20 0.028 at VGS = 2.5 V ID (A)a 6.0 5.0 Qg (Typ.) 1.8.
AO6800 Key Features
- Halogen-free According to IEC 61249-2-21 Definition
- TrenchFET® Power MOSFET
- 100 % Rg Tested
- pliant to RoHS Directive 2002/95/EC