AO8810 - Dual N-Channel MOSFET

VBsemi

Key Features

Halogen-free Option Available.
TrenchFET® Power MOSFETs www. VBsemi. com Pb-free Available RoHS.

AO8810 dual n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	AO8810
Manufacturer	VBsemi
File Size	210.23 KB
Description	Dual N-Channel MOSFET
Datasheet	AO8810 Datasheet

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AO8810-VB PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.014 at VGS = 4.5 V 20 0.018 at VGS = 2.5 V AO8810-VB Datasheet Dual N-Channel MOSFET ID (A) 7.6 6.5 FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFETs www.VBsemi.com Pb-free Available RoHS* COMPLIANT D1 S1 2 S1 3 G1 4 TSSOP-8 Top View 8D 7 S2 6 S2 5 G2 D D G1 G2 S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 20 V VGS ± 12 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 7.6 6.2 6.5 4.5 A IDM 30 Continuous Source Current (Diode Conduction)a IS 1.5 1.0 Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 1.5 1.0 0.96 0.