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AOD444
AOD444 Datasheet
www.VBsemi.com
N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 60
RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS = 4.5 V
TO-252
ID (A) 18 15
Qg (Typ.) 19.8
G
D
S
Drain Connected to Tab
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Material categorization:
For definitions of compliance please see
APPLICATIONS
• DC/DC Converters • DC/AC Inverters • Motor Drives
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C
L = 0.