• Part: AOD608
  • Description: N- and P-Channel 60V MOSFET
  • Category: MOSFET
  • Manufacturer: VBsemi
  • Size: 298.55 KB
Download AOD608 Datasheet PDF
VBsemi
AOD608
FEATURES - Halogen-free According to IEC 61249-2-21 Available - Trench Power MOSFET - 100 % Rg and UIS Tested APPLICATIONS - CCFL Inverter D1/D2 Top View Drain Connected to Tab G1 S1 N -channel G2 S2 P-channel S1 G1 D1/D2 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) Parameter Symbol Nch Limit Pch Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a Operating Junction and Storage Temperature Range TC=25°C TC=25°C TC=25°C VDS VGS ID IDM IS PD TJ, Tstg 60 ±20 35 140 35 50 TJ, Tstg -60 ±20 -20 -80 -20 50 -55 to 175 Units V A A W °C Parameter Maximum Junction-to-Ambient c Maximum Junction-to-Case THERMAL RESISTANCE RATINGS Symbol RθJA RθJC Maximum 50 3 Units °C/W Notes a. Package Limited b. Pulse width limited by maximum junction temperature c. Surface Mounted on 1” x 1” FR4 Board. AOD608-VB .VBsemi. Parameter Symbol Test...