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AOI478 - N-Channel 100V MOSFET

Features

  • DT-Trench Power MOSFET.
  • 175 °C Junction Temperature.
  • 100 % Rg Tested.

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Datasheet Details

Part number AOI478
Manufacturer VBsemi
File Size 230.34 KB
Description N-Channel 100V MOSFET
Datasheet download datasheet AOI478 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOI478-VB AOI478-VB Datasheet N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.110 at VGS = 10 V 0.115 at VGS = 6 V ID (A) 15 15 FEATURES • DT-Trench Power MOSFET • 175 °C Junction Temperature • 100 % Rg Tested APPLICATIONS • Primary Side Switch www.VBsemi.com TO-251 D GDS Top View G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 175 °C)b TC = 25 °C TC = 125 °C ID 15 8.7 Pulsed Drain Current IDM 45 A Continuous Source Current (Diode Conduction) IS 15 Avalanche Current IAR 15 Repetitive Avalanche Energy (Duty Cycle  1 %) L = 0.1 mH EAR 11.
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