AON6910A - Dual N-Channel MOSFET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
TrenchFET® Power MOSFET.
100 % UIS Tested.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

AON6910A dual n-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	AON6910A
Manufacturer	VBsemi
File Size	500.83 KB
Description	Dual N-Channel MOSFET
Datasheet	AON6910A Datasheet

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AON6910A Dual N-Channel 30V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0034 at VGS = 10 V 30 0.0043 at VGS = 4.5 V ID (A) 60 55 Qg (Typ.) 17 nC FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % UIS Tested • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Set Top Box • Low Current DC/DC PHASE Top View Bottom View ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Single Pulse Avalanche Current Single Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.