The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
AOT254L-VB
AOT254L-VB Datasheet
N-Channel 150-V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
150
0.030 at VGS = 10 V
0.033 at VGS = 6 V
ID (A) 50 45
TO-220AB
FEATURES • Trench Power MOSFETs • 175 °C Junction Temperature • New Low Thermal Resistance Package • PWM Optimized • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Primary Side Switch
D
GD S Top View
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAR
Repetitive Avalanche Energya
L = 0.
AOT254L Datasheet
