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AP30T10GM-HF-VB
AP30T10GM-HF-VB Datasheet N-Channel 100-V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.051 at VGS = 10 V 100
0.069 at VGS = 4.5 V
ID (A)d 6.8 5.8
Qg (Typ.) 9 nC
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
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FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV
D
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
100
V
VGS
± 20
TC = 25 °C
6.8
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
5.4 4.4a, b
Pulsed Drain Current
TA = 70 °C
3.
AP30T10GM-HF Datasheet
