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AP30T10GM-HF - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Available.
  • TrenchFET® Power MOSFET.
  • 100 % UIS Tested.

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Other Datasheets by VBsemi

Part Number Description
AP30T10GH-HF N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP30T10GM-HF-VB AP30T10GM-HF-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.051 at VGS = 10 V 100 0.069 at VGS = 4.5 V ID (A)d 6.8 5.8 Qg (Typ.) 9 nC SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 TC = 25 °C 6.8 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 5.4 4.4a, b Pulsed Drain Current TA = 70 °C 3.