VBsemi Electronics AP4523GH
N- and P-Channel 40V MOSFET
FEATURES
● Trench Power MOSFET● 100 % Rg and UIS Tested
APPLICATIONS
● CCFL Inverter TO-252-4L D-PAK D1/D2 Top View Drain Connected to Tab S1 G1 S2 G2 D1/D2 G1 S1 N -channel G2 S2 P-channelABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage VDS 40 - 40 Gate-Source Voltage VGS ± 20 Continuous Drain Currenta TC = 25 °C TC = 125 °C ID 50 35 Continuous Source Current (Diode Conduction)a IS 50 Pulsed Drain Currentb IDM 150 -50 -35 -50 -150 Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.1 mH IAS 30 EAS 245 - 30 245 Maximum Power Dissipationb TC = 25 °C TC = 125 °C PD 108 32 108 32 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to + 175 Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d.