VBsemi Electronics AP4563GH
Dual-Channel MOSFET
| Part No. | AP4563GH |
|---|---|
| Datasheet | AP4563GH Download |
| Manufacturer | VBsemi Electronics |
| Description | Dual-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® Power MOSFET● 100 % Rg and UIS Tdested
APPLICATIONS
● CCFL Inverter TO-252-4L D-PAK D1/D2 Top View Drain Connected to Tab S1 G1 S2 G2 D1/D2 G1 S1 N -channel G2 S2 P-channelABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL N-CHANNEL P-CHANNEL Drain-Source Voltage Gate-Source Voltage Continuous Drain Currenta Continuous Source Current (Diode Conduction)a Pulsed Drain Currentb Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TC = 25 °C TC = 125 °C L = 0.1 mH TC = 25 °C TC = 125 °C VDS VGS ID IS IDM IAS EAS PD TJ, Tstg 40 - 40 ± 20 50 -50 35 -35 50 -50 150 -150 30 - 30 245 245 108 108 32 32 - 55 to + 175 260 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Case (Drain) Notes a. Package limited. b. Pulse test; pulse width 300 μs, duty cycle 2 %. c. When mounted on 1" square PCB (FR4 material). d.
