AP4575GM Datasheet | VBsemi

FEATURES - Halogen-free According to IEC 61249-2-21 Available - Trench FET® Power MOSFET - 100 % Rg and UIS Tested APPLICATIONS - CCFL Inverter D1 S2 S1 1 G1 2 S2 3 G2 4 SO-8 8 D1 7 D1 6 D2 5 D2 G1 S1 G2 D2 N-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (10 µs Pulse Width) Source Drain Current Diode Current Pulsed Source-Drain Current Single Pulse Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation - 60 V ± 20 TC = 25 °C - 4.9 TC = 70 °C TA = 25 °C 4.3 4.3b, c - 4.2 - 4.0b, c TA = 70 °C 3.4b, c - 3.4b,...