AP75T10BGP - N-Channel 100V MOSFET

VBsemi

Key Features

TrenchFET® Power MOSFET.
175 °C Maximum Junction Temperature.
Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET.

AP75T10BGP n-channel 100v mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	AP75T10BGP
Manufacturer	VBsemi
File Size	884.42 KB
Description	N-Channel 100V MOSFET
Datasheet	AP75T10BGP Datasheet

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AP75T10BGP N-Channel 100-V (D-S) 175 °C MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0085 at VGS = 10 V 100 0.010 at VGS = 6 V ID (A) 100 85 FEATURES • TrenchFET® Power MOSFET • 175 °C Maximum Junction Temperature • Compliant to RoHS Directive 2002/95/EC TO-220AB D GD S G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 100 V VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 125 °C 100 ID 75 a A Pulsed Drain Current IDM 300 Avalanche Current Single Pulse Avalanche Energyb IAS 75 L = 0.1 mH EAS 280 mJ Maximum Power Dissipationb TC = 25 °C (TO-220AB and TO-263) TA = 25 °C (TO-263)d PD 250c 3.