AP9575GM Description
AP9575GM P-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.050 0.060.
AP9575GM Key Features
- TrenchFET® power MOSFET
- 100 % Rg and UIS tested
| Part number | AP9575GM |
|---|---|
| Download | AP9575GM Datasheet (PDF) |
| File Size | 249.86 KB |
| Manufacturer | VBsemi |
| Description | P-Channel MOSFET |
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| Manufacturer | Part Number | Description |
|---|---|---|
Advanced Power Electronics Corp |
AP9575GM | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Electronics Corp |
AP9575GM-HF | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Electronics Corp |
AP9575GH | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Advanced Power Electronics Corp |
AP9575GH-HF | P-Channel MOSFET |
Advanced Power Electronics Corp |
AP9575GH-HF-3 | P-Channel MOSFET |
AP9575GM P-Channel 60 V (D-S) MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.050 0.060.