AP9575GM - P-Channel MOSFET

VBsemi

Key Features

TrenchFET® power MOSFET.
100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET.

AP9575GM p-channel mosfet by VBsemi - Datasheet Preview

Datasheet Details

Part number	AP9575GM
Manufacturer	VBsemi
File Size	249.86 KB
Description	P-Channel MOSFET
Datasheet	AP9575GM Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP9575GM P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) at VGS = -10 V RDS(on) (Ω) at VGS = -4.5 V ID (A) per leg -60 0.050 0.060 -8 FEATURES • TrenchFET® power MOSFET • 100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipation a TC = 25 °C PD TC = 125 °C Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -60 ± 20 -8 -4.75 -4.5 -32 -22.