VBsemi Electronics AP9575GM
P-Channel MOSFET
| Part No. | AP9575GM |
|---|---|
| Datasheet | AP9575GM Download |
| Manufacturer | VBsemi Electronics |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
● TrenchFET® power MOSFET● 100 % Rg and UIS tested SO-8 S1 S2 S3 G4 8D 7D 6D 5D Top View S G D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C ID TC = 125 °C Continuous Source Current (Diode Conduction) IS Pulsed Drain Current a IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy IAS L = 0.1 mH EAS Maximum Power Dissipation a TC = 25 °C PD TC = 125 °C Operating Junction and Storage Temperature Range TJ, Tstg LIMIT -60 ± 20 -8 -4.75 -4.5 -32 -22.4 25 5 1.67 -55 to +175 THERMAL RESISTANCE RATINGS PARAMETER Junction-to-Ambient Junction-to-Foot (Drain) Notes a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %. b. When mounted on 1" square PCB (FR-4 material). c. Parametric verification ongoing. PCB Mount b SYMBOL RthJA RthJF LIMIT 110 30 MM UNIT V A mJ W °C UNIT °C/W 1 AP9575GM SPECIFICATIONS (TC = 25 °C, unless otherwise noted) PARAM...
