AP9971GI-HF
Overview
- Isolated Package
- High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)
- Sink to Lead Creepage Distance = 4.8 mm
- 175 °C Operating Temperature
- Dynamic dV/dt Rating
- Low Thermal Resistance
- Lead (Pb)-free Available RoHS
Datasheets by Manufacturer
- AP9971GI-HF — Advanced Power Electronics Corp — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- AP9971GJ-HF-3TB — Advanced Power Electronics Corp — N-channel Enhancement-mode Power MOSFET
- AP9971GS-3TR — Advanced Power Electronics Corp — N-channel Enhancement-mode Power MOSFET
- AP9971GP-3TB — Advanced Power Electronics Corp — N-channel Enhancement-mode Power MOSFET
- AP9971GP — Advanced Power Electronics Corp — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- AP9971GM-HF — Advanced Power Electronics Corp — Dual N-channel Enhancement-mode Power MOSFET
- AP9971GP-HF — Advanced Power Electronics Corp — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- AP9971GJ-HF — Advanced Power Electronics Corp — N-Channel MOSFET
- AP9971AGH-HF — Advanced Power Electronics Corp — N-CHANNEL ENHANCEMENT MODE POWER MOSFET
- AP9971AGS — Advanced Power Electronics Corp — N-CHANNEL ENHANCEMENT MODE POWER MOSFET