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APM9948J-VB
APM9948J-VB Datasheet Dual N-Channel 60 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V RDS(on) (Ω) at VGS = 4.5 V ID (A) per leg Configuration
60 0.033 0.045
7 Dual
FEATURES • Trench power MOSFET • 100 % Rg and UIS tested
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D2
D2
D1 D1
PDIP-8
G2 S2 G1
S1
D1
D2
G1
G2
S1
S2
N-Channel MOSFET N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Diode Conduction) a Pulsed Drain Current b Single Pulse Avalanche Current Single Pulse Avalanche Energy
Maximum Power Dissipation b
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 125 °C
L = 0.