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AUF1010ZL-VB
AUF1010ZL-VB Datasheet N-Channel 60 V (D-S) 175 °C MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) at VGS = 10 V ID (A) Configuration Package
TO-262
60 0.006 120 Single TO-262
FEATURES • TrenchFET® power MOSFET • Package with low thermal resistance • AEC-Q101 qualified d • 100 % Rg and UIS tested
D
SS D G
Top View
G
N-Channel MOSFET
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
TC = 25 °C a TC = 125 °C
ID
Continuous Source Current (Diode Conduction) a
IS
Pulsed Drain Current b
IDM
Single Pulse Avalanche Current Single Pulse Avalanche Energy
L = 0.